COMPENSATEUR AUTOMATIQUE DE FOND ET DU COURANT D'OBSCURITE DANS LE COURANT DE SORTIE D'UN PHOTOMULTIPLICATEURZAMETIN VI; PUTILIN AN.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 6; PP. 163-166; BIBL. 8 REF.Article

CHARACTERIZATION OF IN_0.53GA_0.47AS PHOTODIODES EXHIBITING LOW DARK CURRENT AND LOW JUNCTION CAPACITANCELEHENY RF; NAHORY RE; POLLACK MA et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 227-231; BIBL. 17 REF.Article

ETUDE DU COURANT D'OBSCURITE DES LAMES A MICROCANAUXPLETNEVA NI; MEL'NIKOVA MM; SATTAROV DK et al.1978; OPT.-MEKH. PROMYSHL.; SUN; DA. 1978; VOL. 45; NO 11; PP. 72-74; BIBL. 7 REF.Article

PERFORMANCE OF IN_XGA_1-XAS_YP_1-Y PHOTODIODES WITH DARK CURRENT LIMITED BY DIFFUSION GENERATION RECOMBINATION, AND TUNNELINGFORREST SR.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 217-226; BIBL. 25 REF.Article

IN⁰,53)GA⁰,47)AS PHOTODIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELINGFORREST SR; LEHENY RF; NAHORY RE et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 3; PP. 322-325; BIBL. 13 REF.Article

VERY LOW DARK CURRENT P-P-P BASE INGAASP/INP PHOTOTRANSISTORSKOBAYASHI M; SAKAI S; UMENO M et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L159-L161; BIBL. 8 REF.Article

MEASUREMENTS ON BULK-CHANNEL MOS CAPACITORS FOR DORK CURRENT CHARACTERIZATION OF PERISTALTIC CHARGE-COUPLED DEVICES.THEUNISSEN MJJ; SNEL J; WILLEMSE PHM et al.1977; PHILIPS RES. REP.; NETHERL.; DA. 1977; VOL. 32; NO 5-6; PP. 429-435; BIBL. 6 REF.Article

ORIGIN OF THE DARK CURRENTS IN GOLD-A-AS₂SE₃ SANDWICH CELLS.ABKOWITZ M; SCHARFE M.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 23; NO 5; PP. 305-309; BIBL. 16 REF.Article

VERY LOW DARK CURRENT HETEROJUNCTION CCD'SMILANO RA; LIU YZ; ANDERSON RJ et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 8; PP. 1294-1301; BIBL. 14 REF.Article

A TECHNIQUE FOR SUPPRESSING DARK CURRENT GENERATED BY INTERFACE STATE IN BURIED CHANNEL CCD IMAGERSSAKS NS.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 7; PP. 131-133; BIBL. 4 REF.Article

INTRODUCTION A L'ETUDE DU BRUIT DANS LES DISPOSITIFS A COUPLAGE DE CHARGESROLLAND G.1979; CENTRE NATION. ET. SPATIALES, NOTE TECH.; FRA; DA. 1979; NO 90; PP. 1-66; (72 P.); BIBL. 30 REF.Article

CONDUCTION STUDIES IN SILICON NITRIDE: DARK CURRENTS AND PHOTOCURRENTS.DIMARIA DJ; ARNETI PC.1977; I.B.M. J. RES. DEVELOP.; U.S.A.; DA. 1977; VOL. 21; NO 3; PP. 227-244; BIBL. 48 REF.Article

DARKCURRENT AND BREAKDOWN CHARACTERISTICS OF DISLOCATION-FREE INP PHOTODIODESLEE TP; BURRUS CA.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 587-589; BIBL. 4 REF.Article

A GA_0.47IN_0.53AS/INP HETEROPHOTODIODE WITH REDUCED DARK CURRENTPEARSALL TP; PISKORSKI M; BROCHET A et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 255-259; BIBL. 9 REF.Article

INTERFACE STATE TRAPPING AND DARK CURRENT GENERATION IN BURIED-CHANNEL CHARGE-COUPLED DEVICESSAKS NS.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1745-1753; BIBL. 23 REF.Article

SURFACE EFFECTS IN HIGH VOLTAGE SILICON SOLAR CELLSMEULENBERG A; ARNDT RA.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 348-354; BIBL. 14 REF.Conference Paper

THEORETICAL AND PRACTICAL INVESTIGATION OF THE THERMAL GENERATION IN GATE CONTROLLED DIODESDER SPIEGEL JV; DECLERCK GJ.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 869-877; BIBL. 32 REF.Article

THE DEPENDENCE OF CCD DARK CURRENT UPON POWER DISSIPATIONMAVOR J; DENYER PB.1978; MICROELECTRON AND RELIABIL; GBR; DA. 1978; VOL. 17; NO 3; PP. 403-404; BIBL. 2 REF.Article

PHOTOCONDUCTION DE COUCHES MINCES DE CDS A HAUTE DISPERSIONMANAEVSKIJ MA; PETROV YU I.1976; DOKL. AKAD NAUK S.S.S.R.; S.S.S.R.; DA. 1976; VOL. 230; NO 6; PP. 1383-1386; BIBL. 11 REF.Article

INGAASP HETEROSTRUCTURE AVALANCHE PHOTODIODES WITH HIGH AVALANCHE GAINNISHIDA K; TAGUCHI K; MATSUMOTO Y et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 3; PP. 251-253; BIBL. 9 REF.Article

A NEW EXPERIMENTAL METHOD TO MEASURE THE TRANSFER INEFFICIENCY OF CHARGE COUPLED DEVICESYAZGAN E.1978; ISTANBUL TEK. UNIV. BUL.; TUR; DA. 1978; VOL. 31; NO 1; PP. 110-128; ABS. TUR; BIBL. 8 REF.Article

TRANSFERRED-ELECTRON PHOTOEMISSION TO 1.4 MU M.ESCHER JS; SANKARAN R.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 2; PP. 87-88; BIBL. 11 REF.Article

AN INVESTIGATION OF PHOTOMULTIPLIER BACKGROUNDWRIGHT AG.1983; JOURNAL OF PHYSICS E: SCIENTIFIC INSTRUMENTS; ISSN 0022-3735; GBR; DA. 1983; VOL. 16; NO 4; PP. 300-307; BIBL. 2 P.Article

LOW DARK CURRENT GAALASSB PHOTODIODESCHIN R; HILL CM.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 4; PP. 332-333; BIBL. 11 REF.Article

A MONOLITHIC 1 X 10 ARRAY OF INGAASP/INP PHOTODIODES WITH SMALL DARK CURRENT AND UNIFORM RESPONSIVITIESTAKAHASHI K; MUROTANI T; ISHII M et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 239-242; BIBL. 13 REF.Article